ON Semi MMBT2907ALT1G

Reference Designs (56)

Attributes

Part Number
Manufacturer
Datasheet
Prefix
Q
Category
Discretes (diodes, transistors, thyristors ...)
Category
Semiconductors and Actives
Category
Transistors
Centroid Not Specified
No
Digikey Description
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 300mW Surface Mount SOT-23-3 (TO-236)
Digikey Part Number
MMBT2907ALT1GOSCT-ND
Lead Free
yes
Mounting Type
surface mount
Mouser Part Number
863-MMBT2907ALT1G
Octopart Part Number
7fe1b6eb1be2a026
Package
SOT23-3
RoHS
yes
Temperature Range High
+150°C
Temperature Range Low
-55°C
Verified Attributes
true
Verified Geometry
true
Verified Pad Assignment
true
Verified Pin Names
true
Breakdown Voltage Collector To Emitter
-60 V
Current Rating
-600 mA
Polarity
PNP
Power Dissipation
225 mW
Voltage Rating Dc
-60 V

Pins

1
BASE
2
EMMITER
3
COLLECTOR

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Arrow (USD) MMBT2907ALT1G**MULT1 2340 0.03650.03510.0248 Buy Now
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Verical (USD) MMBT2907ALT1G 2046000 Buy Now
Digi-Key (USD) MMBT2907ALT1GOSCT-ND 281872 0.10.0950.0516 Buy Now
Digi-Key (USD) MMBT2907ALT1GOSDKR-ND 281872 0.10.0950.0516 Buy Now
Digi-Key (USD) MMBT2907ALT1GOSTR-ND 279000 Buy Now
Newark (USD) 67R1338 111000 Buy Now
Newark (USD) 88H4785 1743 0.0130.0130.013 Buy Now
Future Electronics (USD) MMBT2907ALT1G 4714000 Buy Now
Mouser (USD) 863-MMBT2907ALT1G 89164 0.10.090.032 Buy Now
Avnet (USD) MMBT2907ALT1G 2654 0.12930.08570.0582 Buy Now
Chip One Stop (JPY) ONSM-0122928 31867 4.252.9 Buy Now
Allied Electronics (USD) 70099529 2384 0.0980.0340.023 Buy Now
Chip One Stop (JPY) ONSM-0035568 20 4.81 Buy Now
Rochester Electronics MMBT2907ALT1G 0 Buy Now
Farnell (GBP) 2317920 111000 Buy Now
Farnell (GBP) 1459099 38789 0.06860.0238 Buy Now
element14 APAC (SGD) 1459099 31166 0.1590.1510.082 Buy Now
RS Components (GBP) 5449438 1653 0.080.070.060.05 Buy Now

Contributors

Datasheet Preview

© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 8
1 Publication Order Number:
MMBT2907ALT1/D
MMBT2907ALT1
General Purpose Transistors
PNP Silicon
Features
Pb-Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage V
CEO
-60 Vdc
Collector-Base Voltage V
CBO
-60 Vdc
Emitter-Base Voltage V
EBO
-5.0 Vdc
Collector Current - Continuous I
C
-600 mAdc
Collector Current - Peak (Note 3) I
CM
-1200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
(Note 1) @T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
R
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
-55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
2F = Device Code
M = Date Code*
G = Pb-Free Package
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
Device Package Shipping
ORDERING INFORMATION
MMBT2907ALT1 SOT-23 3000 Tape & Reel
MMBT2907ALT3G SOT-23
(Pb-Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT2907ALT1G SOT-23
(Pb-Free)
MMBT2907ALT3 SOT-23 10,000 Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3000 Tape & Reel
10,000 Tape & Reel
SOT-23 (TO-236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
1
2
1
3
2FMG
G
MMBT2907ALT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 4)
(I
C
= -1.0 mAdc, I
B
= 0)
(I
C
= -10 mAdc, I
B
= 0)
V
(BR)CEO
-60
-60
-
-
Vdc
Collector-Base Breakdown Voltage (I
C
= -10 Adc, I
E
= 0)
V
(BR)CBO
-60 - Vdc
Emitter-Base Breakdown Voltage (I
E
= -10 Adc, I
C
= 0)
V
(BR)EBO
-5.0 - Vdc
Collector Cutoff Current (V
CE
= -30 Vdc, V
EB(off)
= -0.5 Vdc) I
CEX
- -50 nAdc
Collector Cutoff Current
(V
CB
= -50 Vdc, I
E
= 0)
(V
CB
= -50 Vdc, I
E
= 0, T
A
= 125°C)
I
CBO
-
-
-0.010
-10
Adc
Base Cutoff Current (V
CE
= -30 Vdc, V
EB(off)
= -0.5 Vdc) I
BL
- -50 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= -0.1 mAdc, V
CE
= -10 Vdc)
(I
C
= -1.0 mAdc, V
CE
= -10 Vdc)
(I
C
= -10 mAdc, V
CE
= -10 Vdc)
(I
C
= -150 mAdc, V
CE
= -10 Vdc)
(I
C
= -500 mAdc, V
CE
= -10 Vdc) (Note 4)
h
FE
75
100
100
100
50
-
-
-
300
-
-
Collector-Emitter Saturation Voltage (Note 4)
(I
C
= -150 mAdc, I
B
= -15 mAdc) (Note 4)
(I
C
= -500 mAdc, I
B
= -50 mAdc)
V
CE(sat)
-
-
-0.4
-1.6
Vdc
Base-Emitter Saturation Voltage (Note 4)
(I
C
= -150 mAdc, I
B
= -15 mAdc)
(I
C
= -500 mAdc, I
B
= -50 mAdc)
V
BE(sat)
-
-
-1.3
-2.6
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (Notes 4, 5),
(I
C
= -50 mAdc, V
CE
= -20 Vdc, f = 100 MHz)
f
T
200 - MHz
Output Capacitance (V
CB
= -10 Vdc, I
E
= 0, f = 1.0 MHz) C
obo
- 8.0
pF
Input Capacitance (V
EB
= -2.0 Vdc, I
C
= 0, f = 1.0 MHz) C
ibo
- 30
SWITCHING CHARACTERISTICS
Turn-On Time
(V
CC
= -30 Vdc, I
C
= -150 mAdc,
I
B1
= -15 mAdc)
t
on
- 45
ns
Delay Time t
d
- 10
Rise Time t
r
- 40
Turn-Off Time
(V
CC
= -6.0 Vdc, I
C
= -150 mAdc,
I
B1
= I
B2
= -15 mAdc)
(V
CC
= -6.0 Vdc, I
C
= -150 mAdc,
I
B1
= I
B2
= -15 mAdc)
t
off
- 100
Storage Time t
s
- 80
Fall Time t
f
- 30
4. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
5. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
0
0
-16 V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME 5.0 ns
+15 V -6.0 V
1.0 k 37
50
1N916
1.0 k
200 ns
-30 V
TO OSCILLOSCOPE
RISE TIME 5.0 ns
INPUT
Z
o
= 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
INPUT
Z
o
= 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
MMBT2907ALT1
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
3.0
0.2
-0.1
T
J
= 125°C
25°C
-55°C
V
CE
= -1.0 V
V
CE
= -10 V
h
FE
, NORMALIZED CURRENT GAIN
2.0
-0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
Figure 4. Collector Saturation Region
I
B
, BASE CURRENT (mA)
-0.4
-0.6
-0.8
-1.0
-0.2
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
CE
I
C
= -1.0 mA
-0.005
-10 mA
-0.01
-100 mA
-500 mA
-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0
-2.0
-3.0
-5.0 -7.0 -10 -20
-30
-50
Figure 5. Turn-On Time
I
C
, COLLECTOR CURRENT
300
-5.0
Figure 6. Turn-Off Time
I
C
, COLLECTOR CURRENT (mA)
-5.0
t, TIME (ns)
t, TIME (ns)
200
100
70
50
30
20
10
7.0
5.0
3.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
t
r
2.0 V
t
d
@ V
BE(off)
= 0 V
V
CC
= -30 V
I
C
/I
B
= 10
T
J
= 25°C
500
300
100
70
50
30
20
10
7.0
5.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
200
t
f
t
s
= t
s
- 1/8 t
f
V
CC
= -30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
MMBT2907ALT1
http://onsemi.com
4
TYPICAL SMALL-SIGNAL Characteristics
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 8. Source Resistance Effects
R
s
, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= -50 A
-100 A
-500 A
-1.0 mA
R
s
= OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
10
8.0
6.0
4.0
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
I
C
= -1.0 mA, R
s
= 430
-500 A, R
s
= 560
-50 A, R
s
= 2.7 k
-100 A, R
s
= 1.6 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
30
Figure 10. Current-Gain - Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
-0.1
2.0
Figure 11. “On” Voltage
I
C
, COLLECTOR CURRENT (mA)
-1.0
Figure 12. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
R
VC
for V
CE(sat)
f
T
, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
COEFFICIENT (mV/ ° C)
20
10
7.0
5.0
3.0
-0.2
-0.3
-0.5
-1.0 -2.0 -3.0 -5.0 -10 -20 -30
400
300
200
100
80
60
40
30
20
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000
-0.8
-0.6
-0.4
-0.2
0
-0.1 -0.2 -0.5
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
-0.1 -0.2 -0.5
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
C
eb
C
cb
V
CE
= -20 V
T
J
= 25°C
R
VB
for V
BE