ON Semi P2N2222AG

Reference Designs (51)

Attributes

Part Number
Manufacturer
Datasheet
Prefix
Q
Category
Discretes (diodes, transistors, thyristors ...)
Category
Semiconductors and Actives
Category
BJTs
Category
Transistors
Centroid Not Specified
No
Digikey Description
Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 625mW Through Hole TO-92-3
Digikey Part Number
P2N2222AGOS-ND
Lead Free
yes
Mfg Package Ident
CASE 29 -11
Mounting Type
Through Hole
Mouser Part Number
863-P2N2222AG
Octopart Part Number
Package
TO-92
RoHS
Yes
Temperature Range High
+150°C
Temperature Range Low
-55°C
Verified Attributes
true
Verified Geometry
true
Verified Pad Assignment
true
Verified Pin Names
true
Current Rating
600 mA
Max Operating Temperature
150 °C
Max Power Dissipation
1.50 W
Polarity
NPN
Voltage Rating Dc
40 V

Pins

1
COLLECTOR
2
BASE
3
EMITTER

Contributors

Datasheet Preview

© Semiconductor Components Industries, LLC, 2007
April, 2007 -- Rev. 5
1 Publication Order Number:
P2N2222A/D
P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are Pb--Free Devices*
MAXIMUM RATINGS (T
A
=25°C unless otherwise noted)
Characteristic
Symbol Value Unit
Collector--Emitter Voltage V
CEO
40 Vdc
Collector--Base Voltage V
CBO
75 Vdc
Emitter--Base Voltage V
EBO
6.0 Vdc
Collector Current -- Continuous I
C
600 mAdc
Total Device Dissipation @ T
A
=25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
=25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
,T
stg
-- 5 5 t o
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
θ
JA
200 °C/W
Thermal Resistance, Junction to Case
R
θ
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
P2N2222ARL1G TO--92
(Pb--Free)
5000 Units/Bulk
Device Package Shipping
P2N2222AG TO--92
(Pb--Free)
2000/Tape & Ammo
ORDERING INFORMATION
COLLECTOR
1
2
BASE
3
EMITTER
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO--92
CASE 29
STYLE 17
MARKING DIAGRAM
P2N2
222A
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb--Free Package
(Note: Microdot may be in either location)
P2N2222A
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2
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage
(I
C
=10mAdc,I
B
=0)
V
(BR)CEO
40 --
Vdc
Collector--Base Breakdown Voltage
(I
C
=10mAdc, I
E
=0)
V
(BR)CBO
75
--
Vdc
Emitter--Base Breakdown Voltage
(I
E
=10mAdc, I
C
=0)
V
(BR)EBO
6.0 --
Vdc
Collector Cutoff Current
(V
CE
=60Vdc,V
EB(off)
=3.0Vdc)
I
CEX
-- 10
nAdc
Collector Cutoff Current
(V
CB
=60Vdc,I
E
=0)
(V
CB
=60Vdc,I
E
=0,T
A
= 150°C)
I
CBO
--
--
0.01
10
mAdc
Emitter Cutoff Current
(V
EB
=3.0Vdc,I
C
=0)
I
EBO
--
10 nAdc
Collector Cutoff Current
(V
CE
=10V)
I
CEO
-- 10
nAdc
Base Cutoff Current
(V
CE
=60Vdc,V
EB(off)
=3.0Vdc)
I
BEX
-- 20
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
=0.1mAdc,V
CE
=10Vdc)
(I
C
=1.0mAdc,V
CE
=10Vdc)
(I
C
=10mAdc,V
CE
=10Vdc)
(I
C
=10mAdc,V
CE
=10Vdc,T
A
=--55°C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 1)
(I
C
= 150 mAdc, V
CE
=1.0Vdc)(Note1)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 1)
h
FE
35
50
75
35
100
50
40
--
--
--
--
300
--
--
--
Collector--Emitter Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
=15mAdc)
(I
C
= 500 mAdc, I
B
=50mAdc)
V
CE(sat)
--
--
0.3
1.0
Vdc
Base--Emitter Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
=15mAdc)
(I
C
= 500 mAdc, I
B
=50mAdc)
V
BE(sat)
0.6
--
1.2
2.0
Vdc
SMALL--SIGNAL CHARACTERISTICS
Current--Gain -- Bandwidth Product (Note 2)
(I
C
=20mAdc,V
CE
= 20 Vdc, f = 100 MHz)C
f
T
300 --
MHz
Output Capacitance
(V
CB
=10Vdc,I
E
=0,f=1.0MHz)
C
obo
-- 8.0
pF
Input Capacitance
(V
EB
=0.5Vdc,I
C
=0,f=1.0MHz)
C
ibo
-- 25
pF
Input Impedance
(I
C
=1.0mAdc,V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
=10mAdc,V
CE
= 10 Vdc, f = 1.0 kHz)
h
ie
2.0
0.25
8.0
1.25
kΩ
Voltage Feedback Ratio
(I
C
=1.0mAdc,V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
=10mAdc,V
CE
= 10 Vdc, f = 1.0 kHz)
h
re
--
--
8.0
4.0
X10
-- 4
Small--Signal Current Gain
(I
C
=1.0mAdc,V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
=10mAdc,V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
50
75
300
375
--
Output Admittance
(I
C
=1.0mAdc,V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
=10mAdc,V
CE
= 10 Vdc, f = 1.0 kHz)
h
oe
5.0
25
35
200
mMhos
Collector Base Time Constant
(I
E
=20mAdc,V
CB
= 20 Vdc, f = 31.8 MHz)
rbC
c
-- 150
ps
Noise Figure
(I
C
= 100 mAdc, V
CE
=10Vdc,R
S
=1.0kΩ,f=1.0kHz)
N
F
-- 4.0
dB
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
P2N2222A
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3
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
=30Vdc,V
BE(off)
=--2.0Vdc,
I
C
= 150 mAdc, I
B1
=15mAdc)(Figure1)
t
d
-- 10 ns
Rise Time t
r
-- 25 ns
Storage Ti me
(V
CC
=30Vdc,I
C
= 150 mAdc,
I
B1
=I
B2
=15mAdc)(Figure2)
t
s
-- 225 ns
Fall Time t
f
-- 60 ns
Figure 1. Turn--On Time Figure 2. Turn--Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
+16 V
-- 2 V
<2ns
0
1.0 to 100 ms,
DUTY CYCLE 2.0%
1kΩ
+30 V
200
C
S
* < 10 pF
+16 V
-- 1 4 V
0
<20ns
1.0 to 100 ms,
DUTY CYCLE 2.0%
1k
+30 V
200
C
S
* < 10 pF
-- 4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN
T
J
= 125°C
25°C
-- 5 5 °C
V
CE
=1.0V
V
CE
=10V
Figure 3. DC Current Gain
P2N2222A
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4
V
CE
, COLLECTOR--EMITTER VOLTA GE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
I
B
, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
T
J
=25°C
I
C
=1.0mA
10 mA 150 mA
500 mA
Figure 5. Turn--On Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20
70
5.0
100
5.0 7.0 30 50
200
10
30
7.0
20
I
C
/I
B
=10
T
J
=25°C
t
r
@V
CC
=30V
t
d
@V
EB(off)
=2.0V
t
d
@V
EB(off)
=0
3.0
2.0
300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn--Off Time
I
C
, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
V
CC
=30V
I
C
/I
B
=10
I
B1
=I
B2
T
J
=25°C
t
s
=t
s
-- 1 / 8 t
f
t
f
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
R
S
, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20
50
0.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
R
S
=OPTIMUM
R
S
= SOURCE
R
S
= RESISTANCE
I
C
=1.0mA,R
S
= 150 Ω
500 m A, R
S
= 200 Ω
100 m A, R
S
=2.0kΩ
50 m A, R
S
=4.0kΩ
f=1.0kHz
I
C
=50mA
100 m A
500 m A
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500
1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k