Fairchild Semiconductor MMBT3904

Reference Designs (159)

Attributes

Part Number
Datasheet
Prefix
Q
Imported From Octopart
yes
Lead Free
Yes
Octopart Part Number
52cd9bc202508d0a
Package
SOT-23
RoHS
Yes
Breakdown Voltage Collector To Emitter
40.00V
Current Rating
0.20A
Mounting Type
surface mount
Polarity
N-Channel, NPN
Power Dissipation
0.35W
Voltage Rating Dc
40.00V

Pins

1
B
2
E
3
C

Pricing

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Supplier Part Number # In Stock 110202550100  
Arrow (USD) MMBT3904**MULT1 3000 0.05560.050.0450.0371 Buy Now
Arrow (USD) MMBT3904 414000 Buy Now
Verical (USD) MMBT3904 417000 Buy Now
Digi-Key (USD) MMBT3904FSCT-ND 319999 0.160.1420.0774 Buy Now
Digi-Key (USD) MMBT3904FSDKR-ND 319999 0.160.1420.0774 Buy Now
Digi-Key (USD) MMBT3904FSTR-ND 318000 Buy Now
Newark (USD) 67R2118 102000 Buy Now
Newark (USD) 58K9431 5137 0.1580.1310.046 Buy Now
Mouser (USD) 512-MMBT3904 120603 0.140.1350.048 Buy Now
Avnet (USD) MMBT3904 131742 Buy Now
Future Electronics (USD) MMBT3904 0 0.05250.0523 Buy Now
Rochester Electronics (USD) MMBT3904 54000 0.030.030.03 Buy Now
Farnell (GBP) 2323147 102000 Buy Now
element14 APAC (SGD) 9846727 136936 0.2260.2180.078 Buy Now
Farnell (GBP) 9846727 27580 0.034 Buy Now
Farnell (GBP) 9846727RL 27580 0.034 Buy Now
RS Components (GBP) 7390303 4650 0.1340.0930.038 Buy Now

Contributors

Datasheet Preview

C
B
E
TO-92
C
B
E
B
C
C
SOT-223
E
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current - Continuous 200 mA
T
J
, T
st
g
Operating and Storage Junction Temperature Range -55 to +150
°
C
2001 Fairchild Semiconductor Corporation
Thermal Characteristics T
A
= 25°C unless otherwise noted
Symbol Characteristic Max Units
2N3904 *MMBT3904 **PZT3904
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
1,000
8.0
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3
°C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 357 125
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
2N3904 MMBT3904
SOT-23
Mark: 1A
PZT3904
2N3904 / MMBT3904 / PZT3904
2N3904/MMBT3904/PZT3904, Rev A
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
I
C
= 1.0 mA, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10 µA, I
E
= 0
60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10 µA, I
C
= 0
6.0 V
I
BL
Base Cutoff Current V
CE
= 30 V, V
EB
= 3V 50 nA
I
CEX
Collector Cutoff Current V
CE
= 30 V, V
EB
= 3V 50 nA
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*
Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
Spice Model
f
T
Current Gain - Bandwidth Product I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
300 MHz
C
obo
Output Capacitance V
CB
= 5.0 V, I
E
= 0,
f = 1.0 MHz
4.0 pF
C
ibo
Input Capacitance V
EB
= 0.5 V, I
C
= 0,
f = 1.0 MHz
8.0 pF
NF Noise Figure
I
C
= 100 µA, V
CE
= 5.0 V,
R
S
=1.0k,f=10 Hz to 15.7kHz
5.0 dB
t
d
Delay Time V
CC
= 3.0 V, V
BE
= 0.5 V, 35 ns
t
r
Rise Time I
C
= 10 mA, I
B1
= 1.0 mA 35 ns
t
s
Storage Time V
CC
= 3.0 V, I
C
= 10mA 200 ns
t
f
Fall Time I
B1
= I
B2
= 1.0 mA 50 ns
h
FE
DC Current Gain I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
40
70
100
60
30
300
V
CE
(
sat
)
Collector-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.2
0.3
V
V
V
BE
(
sat
)
Base-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.65 0.85
0.95
V
V
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
2N3904 / MMBT3904 / PZT3904
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β
= 10
25 °C
125 °C
- 40 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β
= 10
125 °C
- 40 °C
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V
= 30V
CB
CBO
°
Capacitance vs
Reverse Bias Voltage
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
C
obo
C
ibo
f = 1.0 MHz
Typical Pulsed Current Gain
vs Collector Current
0.1 1 10 1 00
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics (continued)
Noise Figure vs Frequency
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
NF - NOISE FIGURE (dB)
V = 5.0V
CE
I = 100
µ
A, R = 500
C
S
I = 1.0 mA
R = 200
C
S
I = 50
µ
A
R = 1.0 k
C
S
I = 0.5 mA
R = 200
C
S
k
Noise Figure vs Source Resistance
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
I = 100
µ
A
C
I = 1.0 mA
C
S
I = 50
µ
A
C
I = 5.0 mA
C
θ
- DEGREES
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h - CURRENT GAIN (dB)
θ
V = 40V
CE
I = 10 mA
C
h
fe
fe
Turn-On Time vs Collector Current
110100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
B1
C
B2
I
c
10
40V
15V
2.0V
t
@
V = 0V
CB
d
t
@
V = 3.0V
CC
r
Rise Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - RISE TIME (ns)
I = I =
B1
C
B2
I
c
10
T = 125°C
T = 25°C
J
V = 40V
CC
r
J
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)