Texas Instruments TPS79333DBVR

Reference Designs (6)

Attributes

Part Number
Manufacturer
Datasheet
Prefix
U
Digikey Description
Digikey Part Number
Lead Free
Yes
Mfg Package Ident
DBV (R-PDSO-G5)
Mouser Part Number
Octopart Part Number
Package
SOT23-5
RoHS
Yes
Temperature Range High
Temperature Range Low

Pins

1
IN
2
GND
3
EN
4
NR
5
OUT

Contributors

Datasheet Preview

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1
FEATURES DESCRIPTION
APPLICATIONS
3
2
4
5
DBV PACKAGE
(TOP VIEW)
1IN
GND
EN
OUT
NR
Fixed Option
3
2
4
6
DBV PACKAGE
(TOP VIEW)
1
IN
GND
EN
OUT
NR
5
FB
Adjustable Option
TPS79328
RIPPLE REJECTION
vs
FREQUENCY
IN
EN
OUT
NR
GND
YEQ, YZQ
PACKAGE
(TOP VIEW)
10 100 1 k 10 k
10
40
80
100 k 1 M 10 M
Ripple Rejection (dB)
Frequency (Hz)
I
OUT
= 10 mA
50
0
V
IN
= 3.8 V
C
OUT
= 10 µF
C
NR
= 0.01 µF
I
OUT
= 200 mA
20
30
60
70
90
100
A3 A1
C3 C1
B2
0
0.05
0.10
0.15
0.20
0.25
0.30
100 1 k 10 k 100 k
Frequency (Hz)
I
OUT
= 1 mA
V
IN
= 3.8 V
C
OUT
= 2.2 µF
C
NR
= 0.1 µF
I
OUT
= 200 mA
TPS79328
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
Output Spectral Noise Density (µV/Hz)
TPS793xx
SLVS348K JULY 2001 REVISED OCTOBER 2007
www.ti.com
ULTRALOW-NOISE, HIGH PSRR, FAST RF 200mA LOW-DROPOUT LINEAR
REGULATORS IN NanoStar™ WAFER CHIP SCALE AND SOT23
234
200mA RF Low-Dropout Regulator
The TPS793xx family of low-dropout (LDO)
With Enable
low-power linear voltage regulators features high
power-supply rejection ratio (PSRR), ultralow-noise,
Available in Fixed Voltage Versions from 1.8V
fast start-up, and excellent line and load transient
to 4.75V and Adjustable (1.22V to 5.5V)
responses in NanoStar wafer chip scale and SOT23
High PSRR (70dB at 10kHz)
packages. NanoStar packaging gives an ultrasmall
Ultralow-Noise (32 μ V
RMS
, TPS79328)
footprint as well as an ultralow profile and package
weight, making it ideal for portable applications such
Fast Start-Up Time (50 μ s)
as handsets and PDAs. Each device in the family is
Stable With a 2.2 μ F Ceramic Capacitor
stable, with a small 2.2 μ F ceramic capacitor on the
Excellent Load/Line Transient Response
output. The TPS793xx family uses an advanced,
proprietary BiCMOS fabrication process to yield
Very Low Dropout Voltage (112mV at 200mA,
extremely low dropout voltages (for example, 112mV
TPS79330)
at 200mA, TPS79330). Each device achieves fast
5- and 6-Pin SOT23 (DBV) and NanoStar Wafer
start-up times (approximately 50 μ s with a 0.001 μ F
Chip Scale (YEQ, YZQ) Packages
bypass capacitor) while consuming very low
quiescent current (170 μ A typical). Moreover, when
the device is placed in standby mode, the supply
RF: VCOs, Receivers, ADCs current is reduced to less than 1 μ A. The TPS79328
exhibits approximately 32 μ V
RMS
of output voltage
Audio
noise at 2.8V output with a 0.1 μ F bypass capacitor.
Cellular and Cordless Telephones
Applications with analog components that are
Bluetooth
®
, Wireless LAN
noise-sensitive, such as portable RF electronics,
Handheld Organizers, PDAs
benefit from the high PSRR and low-noise features
as well as the fast response time.
Figure 1.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 NanoStar is a trademark of Texas Instruments.
3 Bluetooth is a registered trademark of Bluetooth SIG, Inc.
4 All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2001 2007, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
www.ti.com
ABSOLUTE MAXIMUM RATINGS
DISSIPATION RATINGS TABLE
TPS793xx
SLVS348K JULY 2001 REVISED OCTOBER 2007
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
(1)
PRODUCT V
OUT
(2)
TPS793 xxyyyz XX is nominal output voltage (for example, 28 = 2.8V, 285 = 2.85V, 01 = Adjustable).
YYY is package designator.
Z is package quantity.
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com .
(2) Output voltages from 1.2V to 4.8V in 50mV increments are available; minimum order quantities may apply. Contact factory for details
and availability.
Over operating temperature range (unless otherwise noted)
(1)
UNIT
V
IN
range 0.3V to 6V
V
EN
range 0.3V to 6V
V
OUT
range 0.3V to 6V
Peak output current Internally limited
ESD rating, HBM 2kV
ESD rating, CDM 500V
Continuous total power dissipation See Dissipation Ratings Table
Junction temperature range, DBV package 40 ° C to +150 ° C
Junction temperature range, YEQ package 40 ° C to +125 ° C
Storage temperature range, T
stg
65 ° C to +150 ° C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
T
A
+25 ° C T
A
= +70 ° C T
A
= +85 ° C
DERATING FACTOR POWER POWER POWER
BOARD PACKAGE R
θ JC
R
θ JA
ABOVE T
A
= +25 ° C RATING RATING RATING
Low-K
(1)
DBV 65 ° C/W 255 ° C/W 3.9mW/ ° C 390mW 215mW 155mW
High-K
(2)
DBV 65 ° C/W 180 ° C/W 5.6mW/ ° C 560mW 310mW 225mW
Low-K
(1)
YEQ 27 ° C/W 255 ° C/W 3.9mW/ ° C 390mW 215mW 155mW
High-K
(2)
YEQ 27 ° C/W 190 ° C/W 5.3mW/ ° C 530mW 296mW 216mW
(1) The JEDEC low-K (1s) board design used to derive this data was a 3-inch x 3-inch, two layer board with 2 ounce copper traces on top
of the board.
(2) The JEDEC high-K (2s2p) board design used to derive this data was a 3-inch x 3-inch, multilayer board with 1 ounce internal power and
ground planes and 2 ounce copper traces on top and bottom of the board.
2 Submit Documentation Feedback Copyright © 2001 2007, Texas Instruments Incorporated
www.ti.com
ELECTRICAL CHARACTERISTICS
TPS793xx
SLVS348K JULY 2001 REVISED OCTOBER 2007
Over recommended operating temperature range T
J
= 40 ° C to +125 ° C, V
EN
= V
IN
, V
IN
= V
OUT(nom)
+ 1V
(1)
, I
OUT
= 1mA,
C
OUT
= 10 μ F, C
NR
= 0.01 μ F (unless otherwise noted). Typical values are at +25 ° C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
IN
Input voltage
(1)
2.7 5.5 V
I
OUT
Continuous output current 0 200 mA
V
FB
Internal reference (TPS79301) 1.201 1.225 1.250 V
Output voltage range (TPS79301) V
FB
5.5 V
DO
V
TPS79318 0 μ A < I
OUT
< 200mA, 2.8V < V
IN
< 5.5V 1.764 1.8 1.836 V
TPS79325 0 μ A < I
OUT
< 200mA, 3.5V < V
IN
< 5.5V 2.45 2.5 2.55 V
TPS79328 0 μ A < I
OUT
< 200mA, 3.8V < V
IN
< 5.5V 2.744 2.8 2.856 V
Output voltage TPS793285 0 μ A < I
OUT
< 200mA, 3.85V < V
IN
< 5.5V 2.793 2.85 2.907 V
TPS79330 0 μ A < I
OUT
< 200mA, 4V < V
IN
< 5.5V 2.94 3 3.06 V
TPS79333 0 μ A I
OUT
< 200mA, 4.3V < V
IN
< 5.5V 3.234 3.3 3.366 V
TPS793475 0 μ A < I
OUT
< 200mA, 5.25V < V
IN
< 5.5V 4.655 4.75 4.845 V
Line regulation ( Δ V
OUT
%/ Δ V
IN
)
(1)
V
OUT
+ 1V < V
IN
5.5V 0.05 0.12 %/V
Load regulation ( Δ V
OUT
%/ Δ I
OUT
) 0 μ A < I
OUT
< 200mA, T
J
= +25 ° C 5 mV
TPS79328 I
OUT
= 200mA 120 200
TPS793285 I
OUT
= 200mA 120 200
Dropout voltage
(2)
TPS79330 I
OUT
= 200mA 112 200 mV
(V
IN
= V
OUT(nom)
0.1V)
TPS79333 I
OUT
= 200mA 102 180
TPS793475 I
OUT
= 200mA 77 125
Output current limit V
OUT
= 0V 285 600 mA
GND pin current 0 μ A < I
OUT
< 200mA 170 220 μ A
Shutdown current
(3)
V
EN
= 0V, 2.7V < V
IN
< 5.5V 0.07 1 μ A
FB pin current V
FB
= 1.8V 1 μ A
f = 100Hz, T
J
= +25 ° C, I
OUT
= 10mA 70
f = 100Hz, T
J
= +25 ° C, I
OUT
= 200mA 68
Power-supply ripple rejection TPS79328 dB
f = 10kHz, T
J
= +25 ° C, I
OUT
= 200mA 70
f = 100kHz, T
J
= +25 ° C, I
OUT
= 200mA 43
C
NR
= 0.001 μ F 55
C
NR
= 0.0047 μ F 36
BW = 200Hz to 100kHz,
Output noise voltage (TPS79328) μ V
RMS
I
OUT
= 200mA
C
NR
= 0.01 μ F 33
C
NR
= 0.1 μ F 32
C
NR
= 0.001 μ F 50
Time, start-up (TPS79328) R
L
= 14 , C
OUT
= 1 μ F C
NR
= 0.0047 μ F 70 μ s
C
NR
= 0.01 μ F 100
High level enable input voltage 2.7V < V
IN
< 5.5V 1.7 V
IN
V
Low level enable input voltage 2.7V < V
IN
< 5.5V 0 0.7 V
EN pin current V
EN
= 0V 1 1 μ A
UVLO threshold V
CC
rising 2.25 2.65 V
UVLO hysteresis 100 mV
(1) Minimum V
IN
is 2.7V or V
OUT
+ V
DO
, whichever is greater.
(2) Dropout is not measured for the TPS79318 and TPS79325 since minimum V
IN
= 2.7V.
(3) For adjustable versions, this parameter applies only after V
IN
is applied; then V
EN
transitions high to low.
Copyright © 2001 2007, Texas Instruments Incorporated Submit Documentation Feedback 3
www.ti.com
FUNCTIONAL BLOCK DIAGRAMS
ADJUSTABLE VERSION
_
+
Thermal
Shutdown
Bandgap
Reference
1.22V
Current
Sense
R2
GND
EN
SHUTDOWN
V
ref
UVLO
ILIM
External to
the Device
R1
UVLO
2.45V
250 k
NR
FB
59 k
QuickStart
OUTIN
IN
FIXED VERSION
_
+
Thermal
Shutdown
Current
Sense
R1
R2
GND
EN
SHUTDOWN
V
ref
UVLO
ILIM
250 k
NR
QuickStart
Bandgap
Reference
1.22V
UVLO
2.45V
R2 = 40 k
IN
IN OUT
TPS793xx
SLVS348K JULY 2001 REVISED OCTOBER 2007
Table 1. Terminal Functions
TERMINAL
SOT23 SOT23 WCSP
NAME ADJ FIXED FIXED DESCRIPTION
Connecting an external capacitor to this pin bypasses noise generated by the internal bandgap.
NR 4 4 B2
This improves power-supply rejection and reduces output noise.
Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts the regulator into
EN 3 3 A3
shutdown mode. EN can be connected to IN if not used.
FB 5 N/A N/A This terminal is the feedback input voltage for the adjustable device.
GND 2 2 A1 Regulator ground
IN 1 1 C3 Input to the device.
OUT 6 5 C1 Output of the regulator.
4 Submit Documentation Feedback Copyright © 2001 2007, Texas Instruments Incorporated